doping level การใช้

• In a semiconductor, the doping level also affects the Mott transition.
• Capacitance-voltage measurements allow computation of the semiconductor doping level and uniformity.
• The thicker the layer and the lower its doping level, the higher the breakdown voltage.
• It is critical to device performance to monitor the doping level and thickness of an epitaxial layer.
• At very high doping levels, the junction does not behave as a rectifier anymore and becomes an ohmic contact.
• Note that the structure of the interstitial in silicon may depend on charge state and doping level of the material.
• Slight changes to the amount of diffusion time, uneven doping levels, etc . can have large effects on device properties.
• It's perhaps different for the materials physicists who are worrying about silicon doping levels and the design of individual transistors.
• On average this variation is between  " 4 mV / K and  " 2 mV / K depending on doping level.
• These components are free of internal stress or intrinsic birefringence, and allow relatively large doping levels or optimized custom-designed doping profiles.
• An n-type to n-type junction, for example, would be considered a homojunction if the doping levels are different.
• These materials can be modeled reasonably well by the free electron gas theory assuming a parabolic conduction band and doping levels above the Mott Criterion.
• The improved injection of carriers into the base allows the base to have a higher doping level, resulting in lower resistance to access the base electrode.
• The structure of type II materials allows a partial filling of the polyhedra, enabling better tuning of the electrical properties and therefore better control of the doping level.
• Two main parameters govern both the breakdown voltage and the R DSon of the transistor : the doping level and the thickness of the N  " epitaxial layer.
• At moderate doping levels the dopant atoms create individual doping levels that can often be considered as localized states that can donate electrons or conduction or valence bands respectively.
• At moderate doping levels the dopant atoms create individual doping levels that can often be considered as localized states that can donate electrons or conduction or valence bands respectively.
• On the contrary, the thinner the layer and the higher the doping level, the lower the R DSon ( and therefore the lower the conduction losses of the MOSFET ).
• Although color is useful, the best method for making a polyaniline sensor is arguably to take advantage of the dramatic changes in electrical conductivity between the different oxidation states or doping levels.
• Conducting polymers, such as polypyrrole ( PPy ) and poly ( 3, 4-ethylenedioxythiophene ) ( PEDOT ), have tunable electronic conductivity and can achieve high doping levels with the proper counterion.